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| HiPerFET TM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C IXFK 21N100Q IXFX 21N100Q VDSS = 1000 V ID25 = 21 A RDS(on)= 0.50 trr 250 ns PLUS 247TM (IXFX) Maximum Ratings 1000 1000 20 30 21 84 21 60 2.5 10 500 -55 ... +150 150 -55 ... +150 300 0.4/6 6 10 V V V V A A A mJ J V/ns W C C C C Nm/lb.in. g g G (TAB) D TO-264 AA (IXFK) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features * IXYS advanced low Qg process * Low gate charge and capacitances - easier to drive - faster switching * International standard packages * Low RDS (on) * Rated for unclamped Inductive load switching (UIS) rated * Molding epoxies meet UL 94 V-0 flammability classification Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control * Temperature and lighting controls Advantages * PLUS 247TM package for clip or spring mounting * Space savings * High power density Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 3 5.5 100 100 2 0.50 V V nA A mA V DSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 4mA VGS = 20 V, VDS = 0 VDS = VDSS TJ = 125C VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Note 1 (c) 2002 IXYS All rights reserved DS98677D(10/03) IXFK 21N100Q IXFX 21N100Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 16 22 6900 VGS = 0 V, VDS = 25 V, f = 1 MHz 550 90 21 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External), 18 60 12 170 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 38 75 0.26 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) PLUS 247TM Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK V DS = 20 V; ID = 0.5 * ID25 Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 21 84 1.5 250 A A V ns C A Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline IF = IS,-di/dt = 100 A/s, VR = 100 V 1.4 8 Dim. Note: 1. Pulse test, t 300 s, duty cycle d 2 % Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFK 21N100Q IXFX 21N100Q Fig. 1. Output Characteristics at 25oC 50 TJ = 25 C O Fig. 2. Output Characteristics at 125oC 30 25 TJ = 125OC VGS = 10V 9V 8V 7V 6V 40 ID - Amperes 30 20 6V ID - Amperes VGS = 10V 9V 8V 7V 20 15 10 5 10 0 5V 5V 0 25 0 5 10 15 20 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. RDS(ON) vs. Drain Current 3.0 VGS = 10V Fig. 4. RDS(ON) vs. TJ 3.0 2.5 2.0 1.5 ID = 10.5A VGS = 10V ID = 21A RDS(ON) - Normalized 2.0 1.5 TJ = 25 C O RDS(ON) - Normalized 20 25 30 2.5 TJ = 125OC 1.0 0.5 0.0 1.0 0.5 0 5 10 15 -25 0 25 50 75 100 125 150 ID - Amperes T J - Degrees C Fig. 5. Drain Current vs. Case Temperature 24 20 Fig. 6. Admittance Curves 25 20 ID - Amperes ID - Amperes 16 12 8 4 0 15 10 5 0 4.0 TJ = 125oC TJ = 25oC TJ = -40oC -50 -25 0 25 50 75 100 125 150 4.5 5.0 5.5 6.0 6.5 7.0 T C - Degrees C VGS - Volts (c) 2002 IXYS All rights reserved IXFK 21N100Q IXFX 21N100Q Fig. 7. Gate Charge Characteristic Curve 10.0 VDS = 500 V ID = 10.5 A IG = 10 mA Fig. 8. Capacitance Curves 10000 5000 Ciss Capacitance - pF 7.5 2500 1000 500 250 100 f = 1MHz Coss VGS - Volts 5.0 2.5 Crss 0.0 0 25 50 75 100 125 150 175 50 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Fig. 9. Source Current vs. Source to Drain Voltage 25 20 ID - Amperes 15 TJ = 125oC 10 TJ = 25oC 5 0 0.2 0.4 0.6 0.8 1.0 VSD - Volts Fig. 10. Thermal Impedance 0.300 0.100 ZthJC - (K/W) Single Pulse 0.010 0.001 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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